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 TSP058SB - TSP320SB
Rated Repetitive PeakOff-State Voltage Part Number Max. VDRM V TSP058SB TSP065SB TSP075SB TSP090SB TSP120SB TSP140SB TSP160SB TSP190SB TSP220SB TSP275SB TSP320SB notes 58 65 75 90 120 140 160 190 220 275 320 (1,3)
Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6)
On-State Voltage Max. VT @ 1A V 5 5 5 5 5 5 5 5 5 5 5 (3)
Repetitive Breakover Holding Off-State Capacitance PeakOff-State Current Currnet (f = 1 MHz , Vac = 15 mVRMS) Current Max. I DRM A 5 5 5 5 5 5 5 5 5 5 5 (3) Max. I BO mA 800 800 800 800 800 800 800 800 800 800 800 (3) Min. IH mA 150 150 150 150 150 150 150 150 150 150 150 (2,3) 70 67 67 57 50 49 46 45 44 44 43 (3) Typ. pF 100 90 78 61 58 54 53 53 52 51 50 (3) 24 22 23 19 17 16 15 14 13 13 13 (3) Max. Typ. pF 29 28 27 21 20 19 18 18 18 18 17 (3) Max.
CO @ 0 Vdc
CO @ 50 Vdc
NOTES: 1. Specific VDRM values are available by request. 2. Specific IH values are available by request. 3. All ratings and characteristics are at 25 C unless otherwise specified. 4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device. 5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform 6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 K, 1/2 AC cycle
Ver: June 2001
PAGE 1
TSP058SB - TSP320SB
PRELIMINARY
SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
* Protects by limiting voltages and shunting surge currents away from sensitive circuits * Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL * Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 * Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
THYRISTOR
SMB/DO-214AA
SUMMARY ELECTRICAL CHARACTERISTICS
TSP058SB - TSP320SB
8. Independently evaluate and test the suitability and performance of the device in the application
MAXIMUM SURGE RATINGS (TJ = 25 C UNLESS OTHERWISE NOTED)
Rating Symbol Short-Circuit Current Wave Open-Circuit Voltage Wave Value Notes 2/10 s 2/10 s 300 A 8/20 s 1.2/50 s 225 A 10/160 s 10/160 s 150 A Non-Repetitive Peak Pulse Current I PPS 5/310 s 10/700 s 115 A 10/560 s 10/560 s 100 A 10/1000 s 10/1000 s 80 A (1,2,3,4) Non-Repetitive Peak On-State Surge Current I TSM
30A
(1,2,4,5,6)
Notes: 1. Thermal accumulation between successive surge tests is not allowed. 2. The device under test initially must be in thermal equilibrium with TJ = 25 C. 3. Test at 1 cycle, 60 Hz. 4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated TJ. Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life. 5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation. 6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T0
60% % Ipps 100%
80%
40%
20%
0% To Ta
Tb
Time
T1
Ver: June 2001
PAGE 2
TSP058SB - TSP320SB
PRELIMINARY
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application: 1. Define the operating parameters for the circuit: * Ambient operating temperature range * Maximum telephone line operating current (highest battery and shortest copper loop) * Maximum operating voltage: (Maximum DC bias + peak ringing voltage) * Maximum surge current * System voltage damage threshold * Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature. 3. Select surge current ratings (IPPS and ITSM) those which the application must withstand. 4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system. 5. Verify that the maximum breakover voltage of the device is below the system damage threshold. 6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. Verify that the device's dimensions fit the application's space considerations.
THYRISTOR
TSP058SB - TSP320SB
Characteristic Thermal Resistance Junction to Leads TL on tab adjacent to plastic. Both leads soldered to identical pad sizes.
Symbol RJL
Value Max. 20
O
Unit C/W
Notes: The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
ELECTRICAL CHARACTERISTICS (TC = 25C UNLESS OTHERWISE NOTED)
Parameters Repetitive Peak Off-State Current Breakover Current Holding Current1 On-State Voltage VD = rated VDRM f = 60 Hz, ISC = 1 Arms, Vac = 1 KVrms, RL = 1 K , 1/2 AC cycle 10/1000s waveform, ISC = 10A, VOC = 62 V, RL = 400 I T = 1 A, Tw = 300 s, 1 pulse Test Conditions Symbol I DRM I BO IH VT 150 5 Min. Max. 5 800 Unit A mA mA V
Notes: Specific IH values are available by request.
Ver: June 2001
PAGE 3
TSP058SB - TSP320SB
PRELIMINARY
MAXIMUM THERMAL RATINGS
Rating Storage Junction Temperature Range Operating Junction Temperature Range Operating Ambient Temperature Range
Notes: PCB board mounted on minimum foot print.
THYRISTOR
Symbol TSTG TJ Ta
Value -50 to 150 -40 to 150 -40 to 65
Unit
O
C C C
O
O
THERMAL CHARACTERISTICS
TSP058SB - TSP320SB
VBR
_I
Characteristic VBO I BO IH IT V
T
Symbol Breakover Voltage Breakover Current Holding Current On-state current On-state voltage
Value Maximum voltage across the device in or at breakdown measured under a specified voltage and current rate of rise Instantaneous current flowing at the breakover voltage (VBO) Minimum current required to maintain the device in the on-state Current through the device in the on-state condition Voltage across the device in the on-state condition at a specified current (IT) The highest instantaneous value of the off-state voltage, including all repetitive transient voltages but excluding all nonrepetitive transient voltages The maximum (peak) value of current that results from the application of VDRM Rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied without damage to the device under test Rated value of the rate of rise of current that the device can withstand without damage. The maximum rate of rise of voltage (belowVDRM) that will not cause switching from the off-state to the on-state.
VDRM
Rated Repetitive Peak Off-State Voltage
I DRM
Repetitive Peak Off-State Current
I PPS
Non-Repetitive Peak pulse current
di/dt dv/dt
Critical rate of rise of on-state current Critical Rate of Rise of Off-State Voltage
Ver: June 2001
PAGE 4
TSP058SB - TSP320SB
PRELIMINARY
+I
IPPS ITSM IT IBO IH
THYRISTOR
IBR
_V
IDRM VT VDRM VBO
+V
TSP058SB - TSP320SB
TSP190SB TSP220SB TSP275SB TSP320SB
45 44 44 43
53 52 51 50
38 37 37 37
39 39 39 38
33 32 32 32
35 35 34 34
28 27 27 27
30 30 29 29
14 13 13 13
18 18 18 17
MECHANICAL DATA
* Case: JEDEC DO-214AA molded plastic * Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 * Polarity: Bi-directional Standard packaging: 12mm tape (EIA-481) * Weight: 0.003 ounce, 0.093 gram
.155 (3.94) .130 (3.30)
SMB / DO-214AA
Unit: inch ( mm )
.083 (2.11)
.075 (1.91)
.185 (4.70) .160 (4.06) .012 (.305) .006 (.152)
.050 (1.27) .030 (0.76) .220 (5.59) .200 (5.08)
.096 (2.44) .083 (2.13)
.008(.203) .002(.051)
Ver: June 2001
PAGE 5
TSP058SB - TSP320SB
PRELIMINARY
CAPACITANCE CHARACTERISTICS
F = 1 MHz, Vac = 15 mVrms Off-State Capacitance CO Part Number 0 V dc Typ. TSP058SB TSP065SB TSP075SB TSP090SB TSP120SB TSP140SB TSP160SB 70 67 67 57 50 49 46 Max. 100 90 78 61 58 54 53 Typ. 59 58 56 48 42 40 38 1 V dc Max. 74 69 64 50 45 43 40 Typ. 53 52 49 42 38 36 34 pF 2 V dc Max. 68 63 58 46 50 43 36 Typ. 45 43 42 35 31 30 28 5 V dc Max. 59 56 49 38 33 32 30 Typ. 24 22 23 19 17 16 15 50 V dc Max. 29 28
THYRISTOR
27 21 20 19 18
TSP058SB - TSP320SB
TSP320SB
320B
2nd line: Marking code
ORDER & PACKING INFORMATION
Device TSPxxxSB 7" Tape & Reel 5 0 0 p cs TSPxxxSB-7 Packing 13" Tape & Reel Min. Order Q'ty 3,000 pcs Order As TSPxxxSB Remark Standard Packing
Ver: June 2001
PAGE 6
TSP058SB - TSP320SB
PRELIMINARY
DEVICE MARKING CODE
Part Number TSP058SB TSP065SB TSP075SB TSP090SB TSP120SB TSP140SB TSP160SB TSP190SB TSP220SB TSP275SB Marking Code 058B 065B 075B 090B 120B
THYRISTOR
140B 160B 190B 220B 275B
PJ YM 058C
1st Line: PJ- PanJit logo Y- Last digit of calendar year M- Month
TSP058SB - TSP320SB
f=1 MHZ
V D=0 Volts DC
v d=15mV RMS AC
T J= 25 C
O
f=1 MHZ
v d=15mV RMS AC
T J= 25 C
O
TYPICAL CAPACITANCE V.S. RATED REPETITIVE OFF-STATE VOLTAGE
TYPICAL CAPACITANCE V.S. OFF-STATE VOLTAGE
100 10 1 0.1 0.01 0.001 0.0001 0
TSP220SC
I D, Off-State Current (mA)
TSP220SB
TSP220SB
20
40
60
80
100
120
140 150
TJ ( C ) TYPICAL OFF-STATE CURRENT V.S JUNCTION TEMPERATURE
O
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and their characterization are constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent information and for any special characteristics not described or specified.
(c) Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. PanJit Internatioal Inc. http://www.panjit.com.tw email: sales@panjit.com.tw
Ver: June 2001
PAGE 7
TSP058SB - TSP320SB
PRELIMINARY
RATING AND CHARACTERISTIC CURVES
90 80 C series device
70 TSP075SC 60 TSP120SC TSP140SC
Capacitance (pF)
70 60 50 40 30 20 50 100 150 200 A series device B series device
Capacitance (pF)
50 40 30 20
TSP190SC
250
300
350
10 0.1
1
10
100
VDRM (V)
VD Off-state Voltage (V)
THYRISTOR


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